參數(shù)資料
型號: AM29F010-55PC5
英文描述: -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF9Z24N with Lead-Free Packaging.
中文描述: x8閃存EEPROM的
文件頁數(shù): 15/39頁
文件大?。?/td> 728K
代理商: AM29F010-55PC5
Am29F002B/Am29F002NB
15
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 μs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation.
Addresses are “don’t-cares” when writing the Erase
Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 μs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended
sectors produces status data on DQ7–DQ0. The
system can use DQ7, or DQ6 and DQ2 together, to
determine if a sector is actively erasing or is erase-sus-
pended. See “Write Operation Status” for information
on these status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See “Write Operation Status” for more
information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
相關PDF資料
PDF描述
AM29F010-55PE5 x8 Flash EEPROM
AM29F010-55PI5 -150V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF6216 with Lead Free Packaging
AM29F100AT-90FE 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ24NL with Lead Free Packaging
AM29F100AT-90FI A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; Similar to IRF6618 qualified for use with lead free soldering shipped in tape and reel 1000 pieces
AM29F100AT-90SC x8/x16 Flash EEPROM
相關代理商/技術參數(shù)
參數(shù)描述
AM29F010-90DGC1 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F01090EC 制造商:AMD 功能描述:*
AM29F010-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, TSSOP
AM29F01090JC 制造商:AMD 功能描述:*
AM29F010-90JC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 1M-Bit 128K x 8 90ns 32-Pin PLCC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Texas Instruments 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC