參數(shù)資料
型號: AM29F002NBT-90PE
英文描述: -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF5305L with Standard Packaging
中文描述: x8閃存EEPROM的
文件頁數(shù): 31/39頁
文件大小: 728K
代理商: AM29F002NBT-90PE
Am29F002B/Am29F002NB
31
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect (Am29F002B only)
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 15.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Unprotect Timing Diagram (Am29F002B only)
相關(guān)PDF資料
PDF描述
AM29F002NBT-90PI -55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package; A IRLIB9343 with Standard Packaging
AM29F004BB-120JE x8 Flash EEPROM
AM29F004BB-120JI -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF4905S with Lead Free packaging
AM29F004BB-55JI x8 Flash EEPROM
AM29F004BB-70JI x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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