參數資料
型號: AM29DS323DT110WMIN
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),1.8伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數: 38/54頁
文件大?。?/td> 1013K
代理商: AM29DS323DT110WMIN
42
Am29DS323D
P R E L I M I NARY
AC CHARACTERISTICS
OE#
CE#
Addresses
VCC
WE#
Data
2AAh
SA
tAH
tWP
tWC
tAS
tWPH
555h for chip erase
10 for Chip Erase
30h
tDS
tVCS
tCS
tDH
55h
tCH
In
Progress
Complete
tWHWH2
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
tRB
tBUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. These waveforms are for the word mode.
Figure 19.
Chip/Sector Erase Operation Timings
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AM29DS323DT120WMIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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