- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375299 > AM29DS320GT70EIN (SPANSION LLC) 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29DS320GT70EIN |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 25/54頁 |
| 文件大小： | 624K |
| 代理商： | AM29DS320GT70EIN |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁
24
Am29DS320G
January 27, 2003
A D V A N C E I N F O R M A T I O N
tion, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read pa-
rameters, and
Figure 14
shows the timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the bank to which the sys-
tem was writing to the read mode. Once erasure be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
command returns that bank to the erase-sus-
pend-read mode. Once programming begins, how-
ever, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Sus-
pend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 13
shows the address and data requirements.
This method is an alternative to that shown in
Table 6
,
which is intended for PROM programmers and re-
quires V
ID
on address pin A9. The autoselect com-
mand sequence may be written to an address within a
bank that is either in the read or erase-suspend-read
mode. The autoselect command may not be written
while the device is actively programming or erasing in
the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the au-
toselect command. The bank then enters the autose-
lect mode. The system may read at any address within
the same bank any number of times without initiating
another autoselect command sequence:
■
A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
■
A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
■
A read cycle to an address containing a sector ad-
dress (SA) within the same bank, and the address
02h on A7–A0 in word mode (or the address 04h on
A6–A-1 in byte mode) returns 01h if the sector is
protected, or 00h if it is unprotected. (Refer to
Table
2
for valid sector addresses).
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Enter SecSi
TM
Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, sixteen-byte electronic serial
number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system is-
sues the four-cycle Exit SecSi Sector command se-
quence. The Exit SecSi Sector command sequence
returns the device to normal operation. The SecSi
Sector is not accessible when the device is executing
an Embedded Program or Embedded Erase algo-
rithm.
Table 13
shows the address and data require-
ments for both command sequences. See also
“SecSi
TM
(Secured Silicon) Sector Flash
Memory Region” for further information.
Note that the
ACC function and unlock bypass modes are not avail-
able when the SecSi Sector is enabled.
Byte/Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program com-
mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is
not
required to provide further controls or
timings. The device automatically provides internally
generated program pulses and verifies the pro-
grammed cell margin.
Table 13
shows the address
and data requirements for the byte program command
sequence.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DS320GB120EE | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS320GB120EEN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS320GB120EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS320GB120EIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS320GB120WMI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DS323DT-110WMI | 制造商:Spansion 功能描述:NOR Flash Parallel 32Mbit 4M/2M x 8bit/16bit 110ns 48-Pin FBGA |
| AM29DS323DT11WMINS | 制造商:Advanced Micro Devices 功能描述: |
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
| AM29F002BB-120EC | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, TSOP32, COM - Trays |
| AM29F002BB-120JCT | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, PLCC32, COM, T&R - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。