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參數(shù)資料
| 型號： | AM29DS320GB70WMIN |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 12 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 24/54頁 |
| 文件大小： | 624K |
| 代理商： | AM29DS320GB70WMIN |
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January 27, 2003
Am29DS320G
23
A D V A N C E I N F O R M A T I O N
Table 12.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations.
Table 13
defines the valid register command
sequences.
Writing incorrect address and data values
or writing them in the improper sequence resets the
device to an unknown state. A reset command is re-
quired to return the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-sus-
pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. After completing a programming operation
in the Erase Suspend mode, the system may once
again read array data with the same exception. See
the Erase Suspend/Erase Resume Commands sec-
tion for more information.
Note that the ACC function
and unlock bypass modes are not available when the
SecSi Sector is enabled.
The system
must
issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase opera-
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0001h
Silicon Revision Number
00h = 0.23 μm, 01h = 0.17 μm
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
0038h
Simultaneous Operation
Number of Sectors (excluding Bank 1)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
9Ch
0095h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
9Eh
000Xh
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
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