參數(shù)資料
型號(hào)： AM29DS163DT120WAI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述： 1M X 16 FLASH 1.8V PROM, 120 ns, PBGA48
封裝： 6 X 8 MM, 0.80 MM PITCH, FBGA-48
文件頁(yè)數(shù)： 26/50頁(yè)
文件大?。?/td> 1682K
代理商： AM29DS163DT120WAI
26
Am29DS163D
A D V A N C E I N F O R M A T I O N
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank.
Refer to
“Write Operation Status” on page 28
for infor-
mation on these status bits.
Once the sector erase operation starts, only the Erase
Suspend command is valid. All other commands are
ignored. However, note that a
hardware reset
imme-
diately
terminates the erase operation. If that occurs,
the sector erase command sequence should be reiniti-
ated once that bank returns to reading array data, to
ensure data integrity.
Figure 4
illustrates the algorithm for the erase opera-
tion. Refer to the
“Erase and Program Operations” on
page 39
for parameters, and
Figure 19, on page 41
section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 50 μs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 20 μs to suspend the erase operation.
However, when the Erase Suspend command is writ-
ten during the sector erase time-out, the device
immediately terminates the time-out period and sus-
pends the erase operation.
After the erase operation is suspended, the bank en-
ters the erase-suspend-read mode. The system can
read data from or program data to any sector not se-
lected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address
within erase-suspended sectors produces status infor-
mation on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is ac-
tively erasing or is erase-suspended. Refer to the
“Write Operation Status” on page 28
section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the
“Write Operation Status” on page 28
sec-
tion for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
“Autoselect Mode” on page 15
and
“Autoselect Com-
mand Sequence” on page 23
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the Re-
sume command are ignored. Another Erase Suspend
command can be written after the chip resumes
erasing.
Figure 4. Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See
Table 14 on page 27
for erase command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關(guān)PDF資料
PDF描述
AM29DS163DT120WAIN 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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