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參數(shù)資料
| 型號： | AM29DL800BT70EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 43/43頁 |
| 文件大?。?/td> | 580K |
| 代理商： | AM29DL800BT70EI |
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Am29DL800B
43
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29DL800B
Revision A+1
Reset Command
Deleted last paragraph in section, which applied to RE-
SET#, not the reset command.
Revision A+2
Hardware Reset (RESET#)
Added note to table, fixed references to note.
Revision A+3
Global
Removed references to the 80 ns speed option.
Changed the 70R ns (V
CC
± 5%) speed option to the
70 ns (V
CC
± 10%) speed option.
Figure 2, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DQ6: Toggle Bit I
In the first and second paragraphs, clarified that the
toggle bit may be read “at any address within the pro-
gramming or erasing bank,” not “at any address.” In the
fourth paragraph, clarified “device” to “bank.”
DC Characteristics
Added reference to Note 4 on I
CC6
and I
CC7
specifica-
tions.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 24, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| Am29DL800BT70EIB | CHOKE RF MOLDED 1.2UH IRON |
| AM29DL800BT70FC | CHOKE RF MOLDED 1.2UH IRON |
| Am29DL800BT70FCB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| Am29DL800BT70FE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| Am29DL800BT70FEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AM29DL800BT-90FC | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
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| AM29DS323DT11WMINS | 制造商:Advanced Micro Devices 功能描述: |
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