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參數(shù)資料
| 型號(hào)： | AM29DL640G90EI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁(yè)數(shù)： | 46/56頁(yè) |
| 文件大小： | 742K |
| 代理商： | AM29DL640G90EI |
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44
Am29DL640G
June 6, 2005
AC CHARACTERISTICS
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ6/DQ2
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 23.
Toggle Bit Timings (During Embedded Algorithms)
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 24.
DQ2 vs. DQ6
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
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| AM29DL640G120PCE | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
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