參數(shù)資料
型號(hào)： AM29DL640G120EE
廠商： SPANSION LLC
元件分類(lèi)： DRAM
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述： 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁(yè)數(shù)： 56/56頁(yè)
文件大?。?/td> 742K
代理商： AM29DL640G120EE
54
Am29DL640G
June 6, 2005
Revision B3 (July 21, 2004)
“Am29DL640G Autoselect Codes, (High Voltage
Method)” on page 15
Replaced “80h (factory locked), 00h (not factory
locked)” with “81h (factory locked), 01h (not factory
locked)”.
“Am29DL640G Command Definitions” on page 28
In SecSI Sector Factory Protect row, Data column -
Replaced “80/00” with “81/01.
(Note 10) - Replaced “The data is 80h for factory
locked and 00h for not factory locked” with “The data is
81h for factory locked and 01h for not factory locked”.
Global Changes
Replaced “80 μ” with “tSEA μ”.
Replaced “20 μ” with “tSEL μ”.
Replaced “1μ” with “tPSP μ”.
Replaced “100 μ” with “tASP μ”.
Replaced “50 μ” with “tSEA μ”.
“Erase and Program Operations” on page 40
Added last four columns to table.
Revision B4 (October 15, 2004)
Cover page and Title page
Added notation to superseding documents.
Revision B5(June 6, 2005)
Modified disclaimers
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor de-
vices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design mea-
sures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks and Notice
Copyright 2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
AM29DL640G120EI 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640G120PCE 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640G120PCI 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640G120WHE 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640G120WHI 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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