參數(shù)資料
型號(hào): AM29DL400BT-90EE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: MO-142DD, TSOP-48
文件頁(yè)數(shù): 35/42頁(yè)
文件大?。?/td> 534K
代理商: AM29DL400BT-90EE
Am29DL400B
35
P R E L I M I N A R Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
t
RRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
μs
RESET#
t
VIDR
12 V
0 V or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 V or 3 V
t
RRB
21606C-27
Figure 23.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29DL400BT-90EEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-90EI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-90EIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-90FC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-90FCB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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