參數資料
型號: AM29DL400BT-80SEB
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 512K X 8 FLASH 3V PROM, 80 ns, PDSO44
封裝: SOP-44
文件頁數: 31/42頁
文件大小: 534K
代理商: AM29DL400BT-80SEB
Am29DL400B
31
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
-70
-80
-90
-120
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
80
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
45
45
45
50
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
35
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
20
20
25
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
35
35
50
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
SR/W
Zero Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
9
μs
Word
Typ
11
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
相關PDF資料
PDF描述
AM29DL400BT-80SI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-80SIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-90EC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-90ECB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BT-90EE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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