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參數資料
| 型號： | AM29DL400BT-120EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 256K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數： | 1/42頁 |
| 文件大?。?/td> | 534K |
| 代理商： | AM29DL400BT-120EC |
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PRELIMINARY
Publication#
21606
Issue Date:
April 1998
Rev:
C
Amendment/
0
Am29DL400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Simultaneous Read/Write operations
— Host system can program or erase in one bank,
then immediately and simultaneously read from
the other bank
— Zero latency between read and write operations
— Read-while-erase
— Read-while-program
I
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
I
Manufactured on 0.35 μm process technology
I
High performance
— Access times as fast as 70 ns
I
Low current consumption (typical values
at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-while-
erase current
— 17 mA active program-while-erase-suspended
current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard t
CE
chip enable access time applies to
transition from automatic sleep mode to active
mode
I
Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
six 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
six 64 Kbyte sectors in byte mode
— Any combination of sectors can be erased
— Supports full chip erase
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Sector protection
— Hardware method of locking a sector to prevent
any program or erase operation within that
sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases sectors or entire chip
— Embedded Program algorithm automatically
programs and verifies data at specified address
I
Minimum 1 million program/erase cycles
guaranteed per sector
I
Package options
— 44-pin SO
— 48-pin TSOP
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
— Superior inadvertent write protection
I
Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
reading and programming in other sectors
— No need to suspend if sector is in the other bank
I
Hardware reset pin (RESET#)
— Hardware method of resetting the device to
reading array data
相關PDF資料 |
PDF描述 |
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| AM29DL400BB-120EC | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BT-120EEB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BB-120EEB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BT-120EIB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BB-120EIB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關代理商/技術參數 |
參數描述 |
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| AM29DL640G70EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL800BB-120WBD | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 120ns 48-Pin FBGA |
| AM29DL800BB-70SI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Trays |
| AM29DL800BB-90EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP |
| AM29DL800BT-120EC | 制造商:Spansion 功能描述:SPZAM29DL800BT-120EC TB 120n EOL160610 |
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