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參數(shù)資料
| 型號： | AM29DL400BB-120FCB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 512K X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | REVERSE, TSOP-48 |
| 文件頁數(shù)： | 42/42頁 |
| 文件大?。?/td> | 534K |
| 代理商： | AM29DL400BB-120FCB |
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42
Am29DL400B
P R E L I M I N A R Y
REVISION SUMMARY
Revision B
Expanded data sheet from Advance Information to Pre-
liminary version.
Revision C
Global
Changed -70R speed option to -70.
Figure 1, In-system Sector Protect/Unprotect
Algorithm
Added “PSLSCNT=1” to sector protect algorithm.
Reset Command
Deleted last paragraph; applies only to hardware reset.
DQ6: Toggle Bit I
First and second para., clarified that the toggle bit may
be read “at any address within the programming or
erasing bank,” not at “any address.” Fourth para., clar-
ified “device” to “bank”
Operating Ranges
Deleted reference to regulated voltage range
DC Characteristics
Added Note 4 reference to I
CC6
and I
CC7
.
Erase and Program Operations
Corrected note references for t
WHWH1
, t
WHWH2
, and
t
VCS
Temporary Sector Unprotect
Added note reference to t
VIDR
.
Figure 24, Sector Protect/Unprotect Timing
Diagram
Updated figure to correct address waveform—valid ad-
dress not required in first cycle.
Alternate CE# Controlled Erase/Program
Operations
Corrected note references for t
WHWH1
, t
WHWH2
Erase and Programming Performance
In Note 2, changed worst case endurance to 1 million
cycles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DL400BB-120FE | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BB-120FEB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BB-120FI | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BB-120FIB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL400BB-120SC | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL400BB70EC | 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述: |
| AM29DL400BB90EC | 制造商:AMD 功能描述:NEW |
| AM29DL640G70EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL800BB-120WBD | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 120ns 48-Pin FBGA |
| AM29DL800BB-70SI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Trays |
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