參數(shù)資料
型號： AM29DL400BB-120EEB
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： 512K X 8 FLASH 3V PROM, 120 ns, PDSO48
封裝： TSOP-48
文件頁數(shù)： 32/42頁
文件大?。?/td> 534K
代理商： AM29DL400BB-120EEB
32
Am29DL400B
P R E L I M I N A R Y
AC CHARACTERISTICS
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
GHWL
t
CS
Status
D
OUT
Program Command Sequence (last two cycles)
RY/BY#
t
RB
t
BUSY
t
CH
PA
Notes:
1. PA = program address, PD = program data, D
OUT
is the true data at the program address.
2. Illustration shows device in word mode.
21606C-21
Figure 17.
Program Operation Timings
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
RY/BY#
t
RB
t
BUSY
Notes:
1.
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
21606C-22
Figure 18.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料
PDF描述
AM29DL400BT-120EIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL400BB-120EIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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