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參數資料
| 型號： | AM28F512A-70PI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 |
| 中文描述： | 64K X 8 FLASH 12V PROM, 70 ns, PDIP32 |
| 封裝： | PLASTIC, DIP-32 |
| 文件頁數： | 22/34頁 |
| 文件大?。?/td> | 463K |
| 代理商： | AM28F512A-70PI |
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Am28F512A
AC CHARACTERISTICS—WRITE/ERASE/PROGRAM OPERATIONS
Alternate CE# Controlled Writes
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Embedded Program Operation of 14 s consists of 10 s program pulse and 4 ms write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded Erase Operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Parameter Symbols
Parameter Description
Am28F512A Speed Options
Unit
JEDEC
Standard
-70
-90
-120
-150
-200
tAVAV
tWC
Write Cycle Time (Note 4)
Min
70
90
120
150
200
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
50
60
75
ns
tDVEH
tDS
Data Setup Time
Min
45
50
ns
tEHDX
tDH
Data Hold Time
Min
10
ns
tOEH
Output Enable Hold Time
for Embedded Algorithm only
Min
10
101010
10
s
tGHEL
Read Recovery Time before Write
Min
0
ns
tWLEL
tWS
WE# Setup Time by CE
#
Min
0
000
ns
tEHWK
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
65
70
80
ns
tEHEL
tCPH
Write Pulse Width HIGH
Min
20
ns
tEHEH3
Embedded Programming Operation
(Note 2)
Min
14
141414
14
s
tEHEH4
Embedded Erase Operation (Note 3)
Typ
5
sec
tVPEL
VPP Setup Time to Chip Enable LOW
(Note 4)
Min
100
ns
tVCS
VCC Setup Time to Chip Enable LOW
(Note 4)
Min
50
505050
50
s
tVPPR
Min
500
ns
tVPPF
Min
500
ns
tLKO
Min
100
ns
相關PDF資料 |
PDF描述 |
|---|---|
| AM28F512A-70PIB | Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 |
| AM28F512A-90EC | Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 |
| Am29F100B-120DTC | Hex Inverters 14-VQFN -40 to 85 |
| AM29F100B-120DTC1 | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| Am29F100B-120DTE | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
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