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  • 參數(shù)資料
    型號(hào): AM28F512A-150PIB
    廠商: Advanced Micro Devices, Inc.
    英文描述: Quadruple 2-Input Positive-NAND Gates 14-SSOP -40 to 85
    中文描述: 512千比特(64畝× 8位)的CMOS 12.0伏,整體擦除閃存的嵌入式記憶算法
    文件頁(yè)數(shù): 25/34頁(yè)
    文件大?。?/td> 463K
    代理商: AM28F512A-150PIB
    31
    Am28F512A
    ERASE AND PROGRAMMING PERFORMANCE
    Notes:
    1. 25
    °C, 12 V V
    PP.
    2. Maximum time specified is lower than worst case. Worst case is derived from the Embedded Algorithm internal counter which
    allows for a maximum 6000 pulses for both program and erase operations. Typical worst case for program and erase is
    significantly less than the actual device limit.
    3. Typical worst case = 84 s. DQ5 = “1” only after a byte takes longer than 96 ms to program.
    LATCHUP CHARACTERISTICS
    PIN CAPACITANCE
    Note: Sampled, not 100% tested. Test conditions TA = 25°C, f = 1.0 MHz.
    DATA RETENTION
    Parameter
    Limits
    Comments
    Min
    Typ
    Max
    Unit
    Chip Erase Time
    1
    10
    sec
    Excludes 00h programming prior to erasure
    Chip Programming Time
    1
    7
    sec
    Excludes system-level overhead
    Write/Erase Cycles
    100,000
    Cycles
    Byte Programming Time
    14
    s
    96
    ms
    Parameter
    Min
    Max
    Input Voltage with respect to VSS on all pins except I/O pins (Including A9 and VPP)
    –1.0 V
    13.5 V
    Input Voltage with respect to VSS on all pins I/O pins
    –1.0 V
    VCC + 1.0 V
    Current
    –100 mA
    +100 mA
    Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
    Parameter
    Symbol
    Parameter Description
    Test Conditions
    Typ
    Max
    Unit
    CIN
    Input Capacitance
    VIN = 0
    8
    10
    pF
    COUT
    Output Capacitance
    VOUT = 0
    8
    12
    pF
    CIN2
    VPP Input Capacitance
    VPP = 0
    8
    12
    pF
    Parameter
    Test Conditions
    Min
    Unit
    Minimum Pattern Data Retention Time
    150
    °C
    10
    Years
    125
    °C
    20
    Years
    相關(guān)PDF資料
    PDF描述
    AM28F512A-200EC Quadruple 2-Input Positive-NAND Gates 14-SSOP -40 to 85
    AM28F512A-200ECB Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85
    AM28F512A-200EE 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
    AM28F512A-200EEB Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85
    AM28F512A-200EI Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85
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