- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366392 > AM28F256A-200PI (ADVANCED MICRO DEVICES INC) 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms PDF資料下載
參數(shù)資料
| 型號： | AM28F256A-200PI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 32K X 8 FLASH 12V PROM, 200 ns, PDIP32 |
| 封裝： | PLASTIC, DIP-32 |
| 文件頁數(shù)： | 7/35頁 |
| 文件大小： | 456K |
| 代理商： | AM28F256A-200PI |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
Am28F256A
7
PIN DESCRIPTION
A0–A14
Address Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE
#
(E
#
)
Chip Enable active low input activates the chip’s control
logic and input buffers. Chip Enable high will deselect
the device and operates the chip in stand-by mode.
DQ0-DQ7
Data Inputs during memory write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected
internally to the die.
OE
#
(G
#
)
Output Enable active low input gates the outputs of the
device through the data buffers during memory read
cycles. Output Enable is high during command
sequencing and program/erase operations.
V
CC
Power supply for device operation. (5.0 V
±
5% or 10%)
V
PP
Program voltage input. V
PP
must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the mem-
ory array contents. Memory contents cannot be altered
when V
PP
≤
V
CC
+2 V.
V
SS
Ground.
WE
#
(W)
Write Enable active low input controls the write function
of the command register to the memory array. The target
address is latched on the falling edge of the Write En-
able pulse and the appropriate data is latched on the ris-
ing edge of the pulse. Write Enable high inhibits writing
to the device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F256A-200PIB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70EC | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70ECB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70EE | Octal bus transceivers and registers 24-PDIP 0 to 70 |
| AM28F256A-70EEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256A-200PIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70EC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70ECB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70EE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70EEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。