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參數(shù)資料
| 型號： | AM28F256A-200PE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | Octal bus transceivers and registers 24-SOIC 0 to 70 |
| 中文描述： | 32K X 8 FLASH 12V PROM, 200 ns, PDIP32 |
| 封裝： | PLASTIC, DIP-32 |
| 文件頁數(shù)： | 25/35頁 |
| 文件大?。?/td> | 456K |
| 代理商： | AM28F256A-200PE |
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Am28F256A
25
AC Characteristics—Write/Erase/Program Operations
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2.
Embedded program operation of 14 μs consists of 10 μs program pulse and 4 μs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded erase operation of 5 sec consists of 4 sec array pre-programming time and 1 sec array erase time. This is a typical
time for one embedded erase operation.
4. Not 100% tested.
Parameter Symbols
Parameter Description
Am28F256A Speed Options
Unit
JEDEC
Standard
-70
-90
-120
-150
-200
t
AVAV
t
WC
Write Cycle Time (Note 4)
Min
70
90
120
150
200
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
50
60
75
ns
t
DVWH
t
DS
Data Setup Time
Min
45
45
50
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
10
10
10
10
10
ns
t
OEH
Output Enable Hold Time for
Embedded Algorithm only
Min
10
10
10
10
10
ns
t
GHWL
Read Recovery Time before Write
Min
0
0
0
0
0
μs
t
ELWLE
t
CSE
Chip Enable Embedded Algorithm
Setup Time
Min
20
20
20
20
20
ns
t
WHEH
t
CH
Chip Enable Hold Time
Min
0
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
45
45
50
60
60
ns
t
WHWL
t
WPH
Write Pulse Width HIGH
Min
20
20
20
20
20
ns
t
WHWH3
Embedded Programming Operation
(Note 2)
Min
14
14
14
14
14
μs
t
WHWH4
Embedded Erase Operation (Note 3)
Typ
5
5
5
5
5
sec
t
VPEL
V
PP
Setup Time to Chip Enable LOW
(Note 4)
Min
100
100
100
100
100
ns
t
VCS
V
CC
Setup Time to Chip Enable LOW
(Note 4)
Min
50
50
50
50
50
μs
t
VPPR
V
PP
Rise Time 90% V
PPH
(Note 4)
Min
500
500
500
500
500
ns
t
VPPF
V
PP
Fall Time 90% V
PPL
(Note 4)
Min
500
500
500
500
500
ns
t
LKO
V
CC
< V
LKO
to Reset (Note 4)
Min
100
100
100
100
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F256A-200PEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200PI | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200PIB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70EC | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70ECB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256A-200PEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200PI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200PIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70EC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-70ECB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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