參數(shù)資料
型號(hào)： AM28F256A-200PCB
廠商： Advanced Micro Devices, Inc.
英文描述： 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述： 256千比特（32畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法
文件頁(yè)數(shù)： 9/35頁(yè)
文件大?。?/td> 456K
代理商： AM28F256A-200PCB
Am28F256A
9
FUNCTIONAL DESCRIPTION
Description Of User Modes
Table 1.
Am28F256A Device Bus Operations (Notes 7 and 8)
Legend:
X = Don’t care, where Don’t Care is either V
IL
or V
IH
levels. V
PPL
= V
PP
<
V
CC
+ 2 V See DC Characteristics for voltage levels
of V
PPH
. 0 V < An < V
CC
+ 2 V (normal TTL or CMOS input levels, where n = 0 or 9).
Notes:
1. V
PPL
may be grounded, connected with a resistor to ground, or < V
CC
+ 2.0 V V
PPH
is the programming voltage specified for
the device. Refer to the DC characteristics. When V
PP
= V
PPL
, memory contents can be read but not written or erased.
2. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 2.
3. 11.5 < V
ID
< 13.0 V Minimum V
ID
rise time and fall time (between 0 and V
ID
voltages) is 500 ns.
4. Read operation with V
PP
= V
PPH
may access array data or the Auto select codes.
5. With V
PP
at high voltage, the standby current is I
CC
+ I
PP
(standby).
6. Refer to Table 3 for valid D
IN
during a write operation.
7. All inputs are Don’t Care unless otherwise stated, where Don’t Care is either V
IL
or V
IH
levels. In the Auto select mode all
addresses except A
9
and A
0
must be held at V
IL
.
8. If V
CC
≤
1.0 Volt, the voltage difference between V
PP
and V
CC
should not exceed 10.0 volts. Also, the Am28F256 has a V
PP
rise time and fall time specification of 500 ns minimum.
Operation
CE
#
(E
#
)
OE
#
(G
#
)
WE
#
(W
#
)
V
PP
(Note 1)
A0
A9
I/O
Read-Only
Read
V
IL
V
IL
X
V
PPL
A0
A9
D
OUT
Standby
V
IH
X
X
V
PPL
X
X
HIGH Z
Output Disable
V
IL
V
IH
V
IH
V
PPL
X
X
HIGH Z
Auto-select Manufacturer
Code (Note 2)
V
IL
V
IL
V
IH
V
PPL
V
IL
V
ID
(Note 3)
CODE
(01h)
Auto-select Device
Code (Note 2)
V
IL
V
IL
V
IH
V
PPL
V
IH
V
ID
(Note 3)
CODE
(2Fh)
Read/Write
Read
V
IL
V
IL
V
IH
V
PPH
A0
A9
D
OUT
(Note 4)
Standby (Note 5)
V
IH
X
X
V
PPH
X
X
HIGH Z
Output Disable
V
IL
V
IH
V
IH
V
PPH
X
X
HIGH Z
Write
V
IL
V
IH
V
IL
V
PPH
A0
A9
D
IN
(Note 6)
相關(guān)PDF資料
PDF描述
AM28F256A-200PE Octal bus transceivers and registers 24-SOIC 0 to 70
AM28F256A-200PEB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200PI 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200PIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-70EC 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256A-200PE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200PEB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200PI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-200PIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F256A-70EC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*