參數(shù)資料
型號(hào): AM28F256-200PEB
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述: 32K X 8 FLASH 12V PROM, 200 ns, PDIP32
封裝: PLASTIC, DIP-32
文件頁(yè)數(shù): 20/35頁(yè)
文件大?。?/td> 493K
代理商: AM28F256-200PEB
20
Am28F256
Auto Select Command
AMD’s Flash memories are designed for use in applica-
tions where the local CPU alters memory contents. Ac-
cordingly, manufacturer and device codes must be
accessible while the device resides in the target sys-
tem. PROM programmers typically access the signa-
ture codes by raising A9 to a high voltage. However,
multiplexing high voltage onto address lines is not a
generally desired system design practice.
The device contains an Auto Select operation to sup-
plement traditional PROM programming methodology.
The operation is initiated by writing 80h or 90h into the
command register. Following this command, a read
cycle address 0000h retrieves the manufacturer code
of 01h. A read cycle from address 0001h returns the
device code. To terminate the operation, it is necessary
to write another valid command, such as Reset (FFh),
into the register.
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AM28F256-200PI Dual voltage-controlled oscillators 16-SOIC 0 to 70
AM28F256-200PIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EC Dual voltage-controlled oscillators 16-SOIC 0 to 70
AM28F256-70ECB Dual voltage-controlled oscillators 16-PDIP 0 to 70
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256-200PI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-200PIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70ECB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70EE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory