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參數(shù)資料
| 型號： | AM28F010A-150FCB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-150FCB |
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FINAL
Publication#
16778
Issue Date:
May 1998
Rev:
D
Amendment/
+2
Am28F010A
1 Megabit (128 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
I
High performance
— Access times as fast as 70 ns
I
CMOS low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
I
Compatible with JEDEC-standard byte-wide
32-pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
I
100,000 write/erase cycles minimum
I
Write and erase voltage 12.0 V
±
5%
I
Latch-up protected to 100 mA from
–1 V to V
CC
+1 V
I
Embedded Erase Electrical Bulk Chip Erase
— 5 seconds typical chip erase, including
pre-programming
I
Embedded Program
— 14 μs typical byte program, including time-out
— 4 seconds typical chip program
I
Command register architecture for
microprocessor/microcontroller compatible
write interface
I
On-chip address and data latches
I
Advanced CMOS flash memory technology
— Low cost single transistor memory cell
I
Embedded algorithms for completely self-timed
write/erase operations
GENERAL DESCRIPTION
The Am28F010A is a 1 Megabit Flash memory orga-
nized as 128 Kbytes of 8 bits each. AMD’s Flash memo-
ries offer the most cost-effective and reliable read/write
non-volatile random access memory. The Am28F010A
is packaged in 32-pin PDIP, PLCC, and TSOP versions.
It is designed to be reprogrammed and erased in-system
or in standard EPROM programmers. The Am28F010A
is erased when shipped from the factory.
The standard Am28F010A offers access times of as fast
as 70 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention,
the device has separate chip enable (CE#) and output
enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F010A uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining
maximum EPROM compatibility.
The Am28F010A is compatible with the AMD
Am28F256A, Am28F512A, and Am28F020A Flash
memories. All devices in the Am28Fxxx family follow the
JEDEC 32-pin pinout standard. In addition, all devices
within this family that offer Embedded Algorithms use
the same command set. This offers designers the flexi-
bility to retain the same device footprint and command
set, at any density between 256 Kbits and 2 Mbits.
AMD’s Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles. The
AMD cell is designed to optimize the erase and program-
ming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal elec-
tric fields for erase and programming operations pro-
duces reliable cycling. The Am28F010A uses a
12.0
±
5% V
PP
input to perform the erase and program-
ming functions.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 mA on address
and data pins from –1 V to V
CC
+1 V.
AMD’s Flash technology combines years of EPROM and
EEPROM experience to produce the highest levels of
quality, reliability, and cost effectiveness. The
Am28F010A electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM pro-
gramming mechanism of hot electron injection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010A-200FCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70JEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90JEB | CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN |
| AM28F010A-120JEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150JEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010A-150FE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150FIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-150JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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