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參數(shù)資料
| 型號(hào)： | AM28F010-200EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 200 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁(yè)數(shù)： | 1/35頁(yè) |
| 文件大?。?/td> | 492K |
| 代理商： | AM28F010-200EE |
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FINAL
Publication#
11559
Issue Date:
January 1998
Rev:
H
Amendment/
+2
Am28F010
1 Megabit (128 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
I
High performance
— 70 ns maximum access time
I
CMOS Low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
I
Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
I
10,000 write/erase cycles minimum
I
Write and erase voltage 12.0 V
±
5%
I
Latch-up protected to 100 mA
from –1 V to V
CC
+1 V
I
Flasherase
Electrical Bulk Chip-Erase
— One second typical chip-erase
I
Flashrite Programming
— 10 μs typical byte-program
— Two seconds typical chip program
I
Command register architecture for
microprocessor/microcontroller compatible
write interface
I
On-chip address and data latches
I
Advanced CMOS flash memory technology
— Low cost single transistor memory cell
I
Automatic write/erase pulse stop timer
GENERAL DESCRIPTION
The Am28F010 is a 1 Megabit Flash memory orga-
nized as 128 Kbytes of 8 bits each. AMD’s Flash mem-
ories offer the most cost-effective and reliable read/
write non-volatile random access memory. The
Am28F010 is packaged in 32-pin PDIP, PLCC, and
TSOP versions. It is designed to be reprogrammed
and erased in-system or in standard EPROM pro-
grammers. The Am28F010 is erased when shipped
from the factory.
The standard Am28F010 offers access times as fast as
70 ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the Am28F010 has separate chip enable (CE#) and
output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F010 uses a command register to manage this
functionality, while maintaining a JEDEC Flash Stan-
dard 32-pin pinout. The command register allows for
100% TTL level control inputs and fixed power supply
levels during erase and programming, while maintain-
ing maximum EPROM compatibility.
AMD’s Flash technology reliably stores memory con-
tents even after 10,000 erase and program cycles. The
AMD cell is designed to optimize the erase and pro-
gramming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal
electric fields for erase and programming operations
produces reliable cycling. The Am28F010 uses a
12.0V
±
5% V
PP
high voltage input to perform the
Flasherase
and Flashrite
algorithms.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 milliamps on
address and data pins from –1 V to V
CC
+1 V.
The Am28F010 is byte programmable using 10 ms pro-
gramming pulses in accordance with AMD’s Flashrite
programming algorithm. The typical room temperature
programming time of the Am28F010 is two seconds.
according to AMD’s Flasherase alrogithm. Typical era-
sure at room temperature is accomplished in less than
one second. The windowed package and the 15–20
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010-200EEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200EI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200EIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200FC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200FCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-200EEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200EI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200FC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-200FCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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