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參數(shù)資料
| 型號： | AM27C256-255JC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 256 Kilobit (32,768 x 8-Bit) CMOS EPROM |
| 中文描述： | 256千比特（32,768 × 8位）的CMOS存儲器 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 90K |
| 代理商： | AM27C256-255JC |
AMD
2-40
Am27C256
DC CHARACTERISTICS over operating range unless otherwise specified.
(Notes 1, 2 and 4)
Parameter
Symbol
V
OH
Parameter Description
Output HIGH Voltage
Test Conditions
I
OH
= –400
μ
A
Min
2.4
Max
Unit
V
V
OL
Output LOW Voltage
I
OL
= 2.1 mA
0.45
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
–0.5
+0.8
V
μ
A
I
LI
Input Load Current
V
IN
= 0 V to +V
CC
I
LO
Output Leakage Current
V
OUT
= 0 V to +V
CC
I
CC1
V
CC
Active Current
(Note 3)
CE
= V
IL
, f = 10 MHz,
I
OUT
= 0 mA
I
CC2
V
CC
TTL Standby Current
CE
= V
IH
1.0
mA
I
CC3
V
CC
CMOS Standby Current
CE
= V
CC
±
0.3 V
100
μ
A
I
PP1
V
PP
Current During Read
CE
=
OE
= V
IL
, V
PP
= V
CC
100
μ
A
C/I Devices
E Devices
1.0
5.0
25
μ
A
mA
1.0
Notes:
1. V
CC
must be applied simultaneously or before V
PP
, and removed simultaneously or after V
PP
.
2.
Caution:
The Am27C256 must not be removed from (or inserted into) a socket when V
CC
or V
PP
is applied.
3. I
CC1
is tested with
OE
= V
IH
to simulate open outputs.
4. Minimum DC Input Voltage is –0.5 V. During transitions, the inputs may overshoot to –2.0 V for periods less than 20 ns.
Maximum DC Voltage on output pins is V
CC
+ 0.5 V, which may overshoot to V
CC
+ 2.0 V for periods less than 20 ns.
–75 –50 –25 0
25
50
75 100 125 150
30
25
20
15
10
Frequency in MHz
08007H-7
1
2
3
4
5
6
7
8
9
10
30
25
20
15
10
S
i
S
i
Temperature in
°
C
Figure 2. Typical Supply Current
vs. Temperature
V
CC
= 5.5 V, f = 10 MHz
Figure 1. Typical Supply Current
vs. Frequency
V
CC
= 5.5 V, T = 25
°
C
08007H-6
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