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參數(shù)資料
| 型號： | AM27C256-120DCB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| 中文描述： | 32K X 8 UVPROM, 120 ns, CDIP28 |
| 封裝： | WINDOWED, CERAMIC, DIP-28 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 171K |
| 代理商： | AM27C256-120DCB |
Am27C256
9
TEST CONDITIONS
Table 1.
Test Specifications
SWITCHING TEST WAVEFORM
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
5.0 V
Device
Under
Test
08007I-7
Figure 3.
Test Setup
Note:
Diodes are IN3064 or equivalents.
Test Condition
-45, -55
and -70
All
others
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
≤
20
ns
Input Pulse Levels
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
2.4 V
0.45 V
Input
Output
Test Points
2.0 V
2.0 V
0.8 V
0.8 V
08007I-8
3 V
0 V
Input
Output
1.5 V
1.5 V
Test Points
Note:
For C
L
= 100 pF
Note:
For C
L
= 30 pF
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
相關PDF資料 |
PDF描述 |
|---|---|
| AM27C256-120DEB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| AM27C256-120DIB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| AM27C256-150DCB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| AM27C256-150DEB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| AM27C256-150DIB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM27C256-120DI | 制造商:Advanced Micro Devices 功能描述:EPROM, 32K x 8, 28 Pin, Ceramic, DIP |
| AM27C256-120JC | 制造商:Advanced Micro Devices 功能描述:EPROM, 32K x 8, 32 Pin, Plastic, PLCC |
| AM27C256-120PC | 制造商:Advanced Micro Devices 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| AM27C256-125JC | 制造商:Advanced Micro Devices 功能描述:Memory |
| AM27C256-150DC | 制造商:Advanced Micro Devices 功能描述:EPROM, 32K x 8, 28 Pin, Ceramic, DIP |
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