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參數(shù)資料
| 型號(hào)： | AM27C1024-55 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | N-channel TrenchMOS logic level FET, SOT669 (LFPAK), Tape reel SMD |
| 中文描述： | 1兆位（65畝× 16位）的CMOS存儲(chǔ)器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 98K |
| 代理商： | AM27C1024-55 |
FINAL
Publication#
06780
Issue Date:
May 1998
Rev:
J
Amendment/
0
Am27C1024
1 Megabit (65 K x 16-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
I
Fast access time
— Speed options as fast as 55 ns
I
Low power consumption
— 20 μA typical CMOS standby current
I
JEDEC-approved pinout
— 40-Pin DIP/PDIP
— 44-Pin PLCC
I
Single +5 V power supply
I
±
10% power supply tolerance standard
I
100% Flashrite programming
— Typical programming time of 8 seconds
I
Latch-up protected to 100 mA from –1 V to
V
CC
+ 1 V
I
High noise immunity
I
Versatile features for simple interfacing
— Both CMOS and TTL input/output compatibility
— Two line control functions
GENERAL DESCRIPTION
The Am27C1024 is a 1 Megabit, ultraviolet erasable
programmable read-only memory. It is organized as 64
Kwords by 16 bits per word, operates from a single
+5 V supply, has a static standby mode, and features
fast single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one time programmable (OTP) PDIP and
PLCC packages.
Data can be typically accessed in less than 55 ns, al-
lowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
thus eliminating bus contention in a multiple bus micro-
processor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 125 mW in active mode,
and 100 μW in standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD’s
Flashrite programming algorithm (100 μs pulses), re-
sulting in a typical programming time of 8 seconds.
BLOCK DIAGRAM
06780J-1
A0–A15
Address
Inputs
PGM#
CE#
OE#
V
CC
V
SS
V
PP
Data Outputs
DQ0–DQ15
Output
Buffers
Y
Gating
1,048,576
Bit Cell
Matrix
X
Decoder
Y
Decoder
Output Enable
Chip Enable
and
Prog Logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM27C1024-70 | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| AM27C1024-90 | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| Am27C1024-200DE5B | 1 Megabit (65 K x 16-Bit) CMOS EPROM |
| Am27C1024-70DE5 | 1 Megabit (65 K x 16-Bit) CMOS EPROM |
| Am27C1024-90DE5 | 1 Megabit (65 K x 16-Bit) CMOS EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM27C128150DC | 制造商:Advanced Micro Devices 功能描述: |
| AM27C128-150DC | 制造商:Rochester Electronics LLC 功能描述: |
| AM27C128-200DC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:EPROM, 16K x 8, 28 Pin, Ceramic, DIP |
| AM27C12855DC | 制造商:AMD 功能描述:IC EPROM |
| AM27C128-55DC | 制造商:AMD 功能描述:IC EPROM |
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