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參數(shù)資料
| 型號(hào)： | AM2729-110 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 中文描述： | S波段雷達(dá)應(yīng)用的射頻 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | AM2729-110 |
August 1992
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2L SFL (S138)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
3:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
105 W MIN. WITH 6.5 dB GAIN
DESCRIPTION
The AM2729-110 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metalliza-
tion, and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM2729-110 is supplied inthe BIGPAC
Her-
metic Metal/Ceramic package with internal
Input/Output matching circuitry, and is intended
for military and other high reliability applications.
PIN CONNECTION
BRANDING
2729-110
ORDER CODE
AM2729-110
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
Power Dissipation*
I
C
Device Current*
V
CC
Collector-Supply Voltage*
T
J
Junction Temperature (Pulsed RF Operation)
T
STG
Storage Temperature
Parameter
(T
C
≤
100
°
C)
Value
438
Unit
W
12
48
250
A
V
°
C
°
C
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.4
°
C/W
*Applies only to rated RFamplifier operation
AM2729-110
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/4
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