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參數(shù)資料
| 型號： | AM13714530WM-SM-R |
| 元件分類： | 放大器 |
| 英文描述： | 13750 MHz - 14500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | CERAMIC PACKAGE-10 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 171K |
| 代理商： | AM13714530WM-SM-R |
E-mail: products@amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
www.amcomusa.com
401 Professional Drive, Suite 140, Gaithersburg, MD 20879
DESCRIPTION
AMCOM’s AM13714530WM-SM-R is part of the GaAs MMIC power amplifier series
and operates across the 13.75 to 14.5 GHz band. It has over 30 dB gain and 30 dBm
output power. The amplifier is packaged in a drop-in ceramic package with RF and
DC connections. The device’s mounting flange helps to facilitate a good thermal
path to a grounded heatsink
.
PERFORMANCE (Vds = 8V, Idq = 650mA, Ta = 25°C)
Parameters
Minimum
Typical
Maximum
Frequency
13.75 – 14.5 GHz
-
P1dB
28 dBm
30.0 dBm
-
IP3
-
40 dBm
-
Gain (Small signal)
27 dB
30 dB
-
Gain variation over frequency
-
± 0.5 dB
± 1.0 dB
Noise Figure
-
7 dB
9 dB
Efficiency at Pin = 1 dBm
-
15 %
-
Input/Output VSWR
-
3:1 / 2.5:1
-
Gate voltage
-0.5V
-0.8V
-1.0V
Drain Current at Pout =30 dBm
-
700mA
-
Thermal Resistance
-
9.2
°C/W
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
Rating
Drain to Source voltage
Vds
10V
Gate to Source voltage
Vgs
-5V
Drain current
Ids
1.63 A
Continuous dissipation (25
°C)
Pt
16.3 W
Junction temperature
Tch
175
°C
Storage temperature
Tsto
-55
°C to +135°C
AM13714530WM-SM
August 2007
Rev. 1
APPLICATIONS
VSAT
Military
FEATURES
Wide bandwidth from 13.75 to 14.5 GHz
High output power, P1dB = 30dBm (typical)
High gain, 30dB (typical)
Fully matched: 50-ohm input/output impedance
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