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參數(shù)資料
| 型號： | ALT6702RM45P9 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 1850 MHz - 1915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 505K |
| 代理商： | ALT6702RM45P9 |
Data Sheet - Rev 2.2
07/2011
ALT6702
7
PERFORMANCE DATA PLOTS:
(LTEOperationat1880MHzand50V system)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Gain
(dB)
Pout (dBm)
Figure 4: LTE Gain (dB) over Temperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
Figure 4: LTE Gain (dB) over Temperature
(VBATT=VCC=+3.4V)
Figure 5: LTE Gain (dB) over Voltage
(TC=258C)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Gain
(dB)
Pout (dBm)
Figure 5: LTE Gain (dB) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
Efficiency
(%)
Pout (dBm)
Figure 6: LTE PAE (%) over Temperature
(Vbatt=VCC=3.4V)
-303.4cc
25C3.4Vcc
90C3.4Vcc
Figure 6: LTE PAE (%) over Temperature
(VBATT=VCC=+3.4V)
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Efficiency
(%)
Pout (dBm)
Figure 7: LTE PAE (%) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
Figure 7: LTE PAE (%) over Voltage
(TC=258C)
Figure8:LTEACLR1(dBc)overTemperature
(VBATT=VCC=+3.4V)
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1(5MHzdBc)
Pout (dBm)
Figure8:LTEACRL1(dBc)overTemperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
Figure9:LTEACLR1(dBc)overVoltage
(TC=258C)
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1(5MHzdBc)
Pout (dBm)
Figure9:LTEACLR1(dBc)overVoltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
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