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參數資料
| 型號： | ALT6701RM45Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN |
| 文件頁數： | 9/11頁 |
| 文件大小： | 514K |
| 代理商： | ALT6701RM45Q7 |
Data Sheet - Rev 2.3
07/2011
ALT6701
7
PERFORMANCE DATA PLOTS:
(LTEOperationat1950MHzand50V system)
Figure4:WCDMAGain(dB)overTemperature
(VBATT=VCC=3.4V)
Figure5:LTEGain(dB)overVoltage
(TC=258C)
Figure 6: LTE PAE (%) over Temperature
(TC=258C)
Figure 7: LTE PAE (%) over Voltage
(TC=258C)
Figure8:LTEACLR1(dBc)overTemperature
(VBATT=VCC=3.4V)
Figure9:LTEACLR1(dBc)overVoltage
(TC=258C)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Gain(dB)
Pout (dBm)
Figure4:WCDMAGain(dB)overTemperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Gain(dB)
Pout (dBm)
Figure5:LTEGain(dB)overVoltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Efficiency
(%)
Pout (dBm)
Figure 6: LTE PAE (%) over Temperature
(Vbatt=VCC=3.4V)
-30 3.4cc
25C3.4Vcc
90C3.4Vcc
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Efficiency
Pout (dBm)
Figure 7: LTE PAE (%) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1(5MHzdBc)
Pout (dBm)
Figure8:LTEACRL1(dBc)overTemperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1(5MHzdBc)
Pout (dBm)
Figure9:LTEACLR1(dBc)overVoltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
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