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參數(shù)資料
| 型號： | ALM-2812-BLKG |
| 元件分類： | 放大器 |
| 英文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1.10 MM HEIGHT, ROHS COMPLIANT PACKAGE-12 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 133K |
| 代理商： | ALM-2812-BLKG |
2
Absolute Maximum Ratings [1]
Parameter
Symbol
Units
Absolute Maximum
Drain – Source Voltage[2]
VDS
V
3.6
2G Drain Current [2]
IDS_2G
mA
30
5G Drain Current [2]
IDS_5G
mA
45
Total Power Dissipation [3]
Pdiss
W
0.2
RF Input Power
Pin max.
dBm
5
Channel Temperature
TCH
*C
150
Storage Temperature
TSTG
*C
-65 to 150
Thermal Resistance [4]
Tch_b
*C/W
29.9
Note:
5. Distribution data sample size is 18K samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal Gain, NF, IIP3, IP1dB and VSWR. Circuit losses
have been de-embedded from actual measurements.
Product Consistency Distribution Charts [5,6]
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25*C.
Derate 33.4mW/*C for TB > 144 *C.
4. Channel-to-board thermal resistance measured
using 150*C Liquid Crystal Measurement
method.
Stdev = 0.9
+3 Std
0
0.3
0.60.9
1.21.5
0
2000
4000
6000
8000
Stdev = 0.3
- 3 Std
+3 Std
15
16
17
18
19
0
2000
4000
6000
8000
10000
Stdev = 0.9
-3 Std
+3 Std
10
12
14
16
18
20
22
0
1000
2000
3000
4000
5000
6000
Stdev = 0.1
+3 Std
0.8
1.1
1.4
1.7
2
2.3
0
2000
4000
6000
8000
Stdev = 0.5
-3 Std
+3 Std
20
21
22
23
24
25
26
0
2000
4000
6000
8000
Stdev = 1.5
-3 Std
16
20
24
28
32
0
2000
4000
6000
8000
Figure 1. Gain @ 2.45GHz; LSL = 15dB, Nominal = 16.7dB, USL = 18.5dB
Figure 2. NF @ 2.45GHz; Nominal = 0.8dB, USL = 1.5dB
Figure 3. Ids @ 2.45GHz; LSL = 11mA, Nominal = 15mA, USL = 21mA
Figure 4. Gain @ 5.5GHz; LSL = 21dB, Nominal = 23.2dB, USL = 25dB
Figure 5. NF @ 5.5GHz; Nominal = 1.4dB, USL = 1.9dB
Figure 6. Ids @ 5.5GHz; LSL = 19mA, Nominal = 23.4mA, USL = 31mA
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參數(shù)描述 |
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