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參數(shù)資料
| 型號： | ALM-1106-TR2 |
| 元件分類： | 放大器 |
| 英文描述： | 900 MHz - 3500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2 X 2 MM, 1.10 MM HEIGHT, SURFACE MOUNT PACKAGE-6 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 176K |
| 代理商： | ALM-1106-TR2 |
2
Absolute Maximum Ratings [1]
Product Consistency Distribution Charts [5,6]
Symbol
Parameter
Units
Absolute Maximum
VDS
Drain - Source Voltage[2]
V
3.6
IDS
Drain Current[2]
mA
15
Pdiss
Total Power Dissipation [3]
mW
54
Pin max.
RF Input Power
dBm
+10
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θch_b
Thermal Resistance [4]
°C/W
232
Figure 1. Gain @ 1.575GHz; LSL = 12.7dB, Nominal = 14.3dB, USL =
15.8dB
Figure 2. NF @ 1.575GHz; Nominal = 0.8dB, USL = 1.3dB
-3 Std
+3 Std
Stdev = 0.4
12
13
14
15
16
17
0
1000
2000
3000
4000
+3 Std
Stdev = 0.1
0
0.3
0.6
0.9
1.2
1.5
0
1000
2000
3000
4000
+3 Std
Stdev = 1.8
357
9
11
13
15
0
500
1000
1500
2000
2500
3000
Figure 3. Ids @ 1.575GHz; Nominal = 8mA, USL = 13mA
Notes:
5. Distribution data sample size is 10K samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal Gain, NF, IIP3, IP1dB and VSWR. Circuit losses
have been de-embedded from actual measurements.
Notes:
1. Operation of this device above any
one of these parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C. Derate 4.32mW/°C for TB > 137 °C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
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