參數(shù)資料
型號: ALD2332PAL
廠商: Advanced Linear Devices Inc
文件頁數(shù): 10/11頁
文件大?。?/td> 0K
描述: IC COMP VOLT PUSH-PULL DL 8PDIP
標準包裝: 50
系列: EPAD®
類型: 通用
元件數(shù): 2
輸出類型: CMOS,NMOS,推挽式,TTL
電壓 - 電源,單路/雙路(±): 4 V ~ 10 V,±2 V ~ 5 V
電壓 - 輸入偏移(最小值): 2mV @ 5V
電流 - 輸入偏壓(最小值): 20pA @ 5V
電流 - 輸出(標準): 50mA @ 5V
電流 - 靜態(tài)(最大值): 500µA
CMRR, PSRR(標準): 80dB CMRR,75dB PSRR
工作溫度: 0°C ~ 70°C
封裝/外殼: 8-DIP(0.300",7.62mm)
安裝類型: 通孔
包裝: 管件
其它名稱: 1014-1126
ALD2332A/ALD2332B/ALD2332
Advanced Linear Devices
8 of 11
This circuit eliminates crossover current in the
complementary power transistors. The outputs can
be used to source and sink different loads or tied
together to provide push-pull drive of the same load.
Design & Operating Notes:
1. As each output sources up to 10mA in the output high state, the output stage of a wired - OR low output circuit must be able to sink this current and still
provide desired output voltage levels. For TTL output levels, this consideration limits the number to a maximum of three ALD2302 outputs wired-OR
together.
2. In order to minimize stray oscillation, all unused inputs must be tied to ground.
3. The input bias and offset currents are essentially input protection diode reverse bias leakage currents, and are typically less than 1 pA at room
temperature. The currents are a function of ambient temperature, and would have to be considered in applications where very high source impedance
or high accuracy are involved.
4. The high output sinking current of 60mA for each output offers flexibility in many applications, as a separate buffer or driver would not be necessary to
drive the intended load. However, as the circuit normally operates close to ambient temperature due to its very low power consumption, thermal effects
caused by large output current transients must be considered in certain applications.
TYPICAL APPLICATIONS (cont'd)
TIME DELAY GENERATOR
+
RF4
V3
RF3
RF2
V+
RF1
+
V2
+
V1
RT
CT
+
VIN
V+
VREF
PUSH-PULL COMPLEMENTARY POWER MOSFET DRIVER
+
+10V
P- Channel VP 02
Power MOSFET
2A Source
2A Sink
N - Channel VN 01
Power MOSFET
+10V
10K
40K
10K
V1
V2
VIN
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