型號(hào): | ALD1116DA |
元件分類: | 小信號(hào)晶體管 |
英文描述: | 12 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
文件頁(yè)數(shù): | 2/4頁(yè) |
文件大小: | 98K |
代理商: | ALD1116DA |
相關(guān)PDF資料 |
PDF描述 |
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ALD1106SB | 12 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1116PA | 12 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1107SB | 12 V, 4 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1107DB | 12 V, 4 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1117DA | 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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ALD1116PA | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1116PAL | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1116SA | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1116SAL | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1117 | 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |