型號(hào): | ALD1107DB |
元件分類(lèi): | 小信號(hào)晶體管 |
英文描述: | 12 V, 4 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封裝: | CERDIP-14 |
文件頁(yè)數(shù): | 5/6頁(yè) |
文件大?。?/td> | 130K |
代理商: | ALD1107DB |
相關(guān)PDF資料 |
PDF描述 |
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ALD1117DA | 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1117PA | 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1117SA | 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1107PB | 12 V, 4 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALF08N20K | 8 A, 200 V, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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ALD1107PB | 功能描述:MOSFET Quad P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1107PBL | 功能描述:MOSFET Quad P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1107SB | 功能描述:MOSFET Quad P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1107SBL | 功能描述:MOSFET Quad P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD110800 | 制造商:ALD 制造商全稱(chēng):Advanced Linear Devices 功能描述:Advanced Liner Devices.Inc QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSFET ARRAY |