型號(hào): | ALD1103DB |
元件分類: | 小信號(hào)晶體管 |
英文描述: | 12 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封裝: | CERDIP-14 |
文件頁(yè)數(shù): | 4/6頁(yè) |
文件大?。?/td> | 129K |
代理商: | ALD1103DB |
相關(guān)PDF資料 |
PDF描述 |
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ALD1106DB | 12 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1116SA | 12 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1106PB | 12 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1116DA | 12 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
ALD1106SB | 12 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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ALD1103PB | 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1103PBL | 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1103SB | 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1103SBL | 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ALD1105 | 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |