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參數(shù)資料
| 型號(hào)： | AJT085 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | JT 39C 37#20 2#16 SKT PLUG |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | AJT085 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 25 mA
BV
CER
I
C
= 25 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 35 V
h
FE
V
CE
= 5.0 V I
C
= 2.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55
55
3.5
20
UNITS
V
V
V
mA
---
R
BE
= 10
20
200
P
G
η
C
V
CC
= 50 V P
OUT
= 85 W f = 960 – 1215
MHz
7.5
40
dB
%
NPN SILICON RF POWER TRANSISTOR
AJT085
DESCRIPTION:
The
ASI AJT085
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CC
P
DISS
300 W @ T
C
≤
100
O
C
T
J
-65
O
C to +250
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
0.75
O
C/W
8.0 A
40 V
PACKAGE STYLE .400 2NL FLG
ORDER CODE: ASI10547
MINIMUM
inches / mm
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.396 / 10.06
.407 / 10.34
.130 / 3.30
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C
E
N
D
M
G
4x .062 x 45°
P
L
K
I
J
2X B
.025 x 45°
A
N
M
.118 / 3.00
.131 / 3.33
.020 / 0.51
.030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03
.415 / 10.54
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
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