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參數(shù)資料
| 型號(hào)： | AIC1811BCV |
| 廠商： | Analog Integrations Corporation |
| 英文描述： | One-Cell Lithium-Ion Battery Protection IC |
| 中文描述： | 單節(jié)鋰離子電池保護(hù)IC |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | AIC1811BCV |
AIC1811
6
detection circuitry. Charging is determined to be in
progress if the voltage between CS and GND is
below charge detection threshold voltage (V
CH
).
DESIGN GUIDE
Selection of External Control MOSFETs
Because the overcurrent protection voltage is
preset, the threshold current for overcurrent
detection is determined by the turn-on resistance
of the discharge control MOSFET M1. The turn-on
resistance of the external control MOSFETs can
be determined by the equation: R
ON
=V
OIP
/ (2 x I
T
)
(I
T
is the overcurrent threshold current). For
example, if the overcurrent threshold current I
T
is
designed to be 3A, the turn-on resistance of the
external control MOSFETs must be 33m
. Users
should be aware that turn-on resistance of the
MOSFET changes with temperature variation due
to heat dissipation. It changes with the voltage
between gate and source as well. (Turn-on
resistance of a MOSFET increases as the voltage
between gate and source decreases). Once the
turn-on resistance of the external MOSFET
changes, the overcurrent threshold current will
change accordingly.
Suppressing the Ripple and Disturbance
from Charger
To suppress the ripple and disturbance from
charger, connecting R1, C1 to VCC pin is
recommended.
Protection at CS pin
R2 is used for latch-up protection when charger is
connected under overdischarge condition and
overstress protection at reverse connecting of a
charger. Larger value of R2 reduces the charger
leakage current in overcharge mode, but possibly
disables the charge detection function after
overdischarge.
Resistance
recommended.
of
51K
is
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