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參數(shù)資料
| 型號： | AHK6030LX |
| 廠商： | Advanced Analogic Technologies, Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:26; Series:MS27472; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | 30V的N溝道功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 244K |
| 代理商： | AHK6030LX |
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
AHK6030LX
30V N-Channel Power MOSFET
6030LX.2001.05.0.91
Electrical Characteristics
(TJ=25
°
C unless otherwise noted)
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
D
=250
μ
A
30
V
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
V
GS
=10V ,V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250
μ
A
V
GS
=
±
20V, V
DS
=0V
V
GS
=0V,V
DS
=30V
V
GS
=0V,V
DS
=30V, T
A
=70
°
C
VDS=15V, ID=10A
9.5
14
10.5
18
R
DS(ON)
Drain-Source ON-Resistance
m
I
D(ON)
V
GS(th)
I
GSS
On-State Drain Current
Gate Threshold Voltage
Gate-Body Leakage Current
56
1.0
A
V
nA
±
100
1
25
I
DSS
Drain Source Leakage Current
μ
A
g
fs
Forward Transconductance
Dynamic Characteristics
19
S
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
I
S
Continuous Diode Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay
Turn-ON Rise Time
Turn-OFF Delay
Turn-OFF Fall Time
45
9
7.5
17
11
60
45
65
nC
nC
nC
ns
ns
ns
ns
V
DS
=15V, I
D
=15A, V
GS
=10V
30
20
100
80
V
DD
=15V, V
GS
=10V, I
D
=15A,
R
G
=6
V
GS
=0, I
S
=28A
1
1.5
23
V
A
Notes:
(a)
Based on thermal dissipation from junction to case. R
θ
JC
+ R
θ
CA
= R
θ
JA
where the case thermal reference is defined as
the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design, however R
θ
CA
is determined by the PCB
design. Package current is limited to 28A DC.
(b)
With minimum copper pads on 1 x 1 inch FR4 board.
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