- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364652 > AH312-S8PCB900 2 Watt, High Linearity InGaP HBT Amplifier PDF資料下載
參數(shù)資料
| 型號： | AH312-S8PCB900 |
| 英文描述： | 2 Watt, High Linearity InGaP HBT Amplifier |
| 中文描述： | 2瓦特，高線性InGaP HBT功率放大器 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 364K |
| 代理商： | AH312-S8PCB900 |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 7 March 2006
AH312
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
400 – 2300 MHz
+33 dBm P1dB
+51 dBm Output IP3
18 dB Gain @ 900 MHz
+5V Single Positive Supply
MTTF > 100 Years
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Specifications
(1)
Product Description
The AH312 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +49 dBm OIP3 and
+33 dBm of compressed 1dB power. It is housed in a lead-
free/green/RoHS-compliant SOIC-8 package. All devices are
100% RF and DC tested.
The AH312 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH312 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Parameter
Operational Bandwidth
Test Frequency
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range, Icc
(3)
Device Voltage, Vcc
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
Typ
2140
10
20
6.8
+33.2
+48
Max
2300
400
9
+32
+47
dBm
+27.5
dBm
+25.3
dB
mA
V
7.7
800
+5
700
900
1. Test conditions unless otherwise noted: 25oC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15
Ω
. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85
°
C
-65 to +150
°
C
+28 dBm
+8 V
1400 mA
8 W
+250
°
C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(4)
Parameter
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Device Bias
(3)
Units
MHz
dB
dB
dB
dBm
dBm
Typical
1960
11
-19
-6.8
+33.4
+51
900
18
-18
-11
+33
+49
2140
10
-20
-6.8
+33.2
+48
dBm
+27
+27.5
dBm
+25.3
dB
8.0
7.3
7.7
+5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25
°
C.
Ordering Information
Part No.
AH312-S8G
AH312-S8PCB900
AH312-S8PCB1960
AH312-S8PCB2140
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
1
2
3
4
8
7
6
5
相關PDF資料 |
PDF描述 |
|---|---|
| AH342 | Active High/Low Complementary Output Hall-effect Latch |
| AH342-PL | Active High/Low Complementary Output Hall-effect Latch |
| AH373 | Internal Pull-up Hall Effect Latch |
| AH373-W | JT 6C 6#20 SKT PLUG |
| AH373-WA | Circular Connector; No. of Contacts:7; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:10-99 RoHS Compliant: No |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AH312-S8TRG | 制造商:TriQuint Semiconductor 功能描述:RF & MW POWER AMPLIFIER |
| AH314 | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
| AH314-G | 功能描述:射頻放大器 2300-2900MHz 23dB RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AH314-PCB | 功能描述:射頻開發(fā)工具 2.4-2.7GHz Eval Brd 23dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AH314TR | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
發(fā)布緊急采購，3分鐘左右您將得到回復。