參數(shù)資料
型號(hào): AH276Q-PL-B-A
廠商: Diodes Inc
文件頁數(shù): 3/6頁
文件大?。?/td> 294K
描述: IC HALL SENSOR LATCH SIP-4
標(biāo)準(zhǔn)包裝: 1,000
傳感范圍: 50G 跳閘,-50G 釋放
類型: 雙極卡鎖
電源電壓: 3.5 V ~ 20 V
電流 - 電源: 25mA
輸出類型: 數(shù)字,開路集電極
工作溫度: -20°C ~ 85°C
封裝/外殼: 4-SIP
供應(yīng)商設(shè)備封裝: 4-SIP
包裝: 散裝
 
AH276Q 
Document number: DS31066 Rev. 6 - 2 
3 of 6
www.diodes.com
September 2013
?Diodes Incorporated 
H276Q
 
 
 
Recommended Operating Conditions (@T
A
 = +25癈, unless otherwise specified.)
 
Symbol
Parameter
Conditions
Min
Max
Unit
V
CC
 
Supply Voltage (Note 4)
Operating
3.5
20
V
T
A
 
Operating Ambient Temperature
Operating
-20
+85
Note: 4. The output DO/DOB is switching as magnetic field change (S>300G, N<-300G). 
 
 
Electrical Characteristics (@T
A
 = +25癈, unless otherwise specified.)
 
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
Z
 
Output Zener Breakdown
 

35

V
V
CE(SAT)
 
Output Saturation Voltage
V
CC
 = 14V, I
L
 = 400mA

0.6
0.9
V
I
CEX
 
Output Leakage Current
V
CE
 = 14V, V
CC
 = 14V

<0.1
 10
礎(chǔ)
I
CC
 
Supply Current
V
CC
 = 20V, Output Open
7
 16
 25
mA
 
 
Magnetic Characteristics (Note 5) (@T
A
 = +25癈, V
CC
 = 14V, unless otherwise specified.) 
A grade
Symbol
Characteristic
Min
Typ
Max
Unit
Bop
Operate Point
10

50
Gauss
Brp
Release Point
-50

-10
Gauss
Bhy
Hysteresis

75

Gauss
 
B grade
Symbol
Characteristic
Min
Typ
Max
Unit
Bop
Operate Point
5

70
Gauss
Brp
Release Point
-70

-5
Gauss
Bhy
Hysteresis

75

Gauss
 
C grade
Symbol
Characteristic
Min
Typ
Max
Unit
Bop
Operate Point


100
Gauss
Brp
Release Point
-100

 
Gauss
Bhy
Hysteresis

75
 
Gauss
Note: 5. Magnetic characteristics are for design information, which will vary with supply voltage, operating temperature and after soldering.
 
 
Bhy
Vsat
Vcc
Brp
Bop
0
S
N
( Magnetic flux density B )
DO
Turn on
Turn off
( off-state )
( on-state )
Bhy
Vsat
Vcc
Brp
Bop
0
S
N
( Magnetic flux density B )
DOB
Turn oFF
Turn on
( off-state )
( on-state )
 
 
 
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