參數(shù)資料
型號： AH215-S8G
元件分類： 放大器
英文描述： 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： GREEN, MS-012, SMT, SOIC-8
文件頁數(shù)： 6/7頁
文件大小： 336K
代理商： AH215-S8G
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 6 of 7 March 2008
AH215
1 Watt, High Linearity InGaP HBT Amplifier
Application Note: Reduced Bias Configurations
The AH215 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R1.
The
recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation.
Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the
ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215
measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.
AH215-S8PCB2140 Performance Data
R1
(ohms)
Icq
(mA)
Pdiss
(W)
P1dB
(dBm)
OIP3
(dBm)
51
450
2.25
+31.0
+47.1
68
400
2.00
+30.9
+46.4
100
350
1.75
+30.8
+46.4
130
300
1.50
+30.6
+45.5
180
250
1.25
+30.5
+43.6
2.14GHz Gain vs. Output Power
8.5
9
9.5
10
10.5
11
11.5
16
18
20
22
24
26
28
30
32
Output Power (dBm)
G
ai
n
(d
B
)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
2.14GHz OIP3 vs. Output Power per Tone
30
35
40
45
50
10
12
14
16
18
20
22
24
Power Out per Tone (dBm)
O
IP
3
(d
B
m
)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
-65
-60
-55
-50
-45
-40
-35
12
14
16
18
20
22
24
W-CDMA Channel Power Out (dBm)
A
C
L
R
(d
B
c
)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
CW PAE vs. Output Power
1
10
100
16
18
20
22
24
26
28
30
32
CW Tone Power Out (dBm)
P
A
E
(%
)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
相關PDF資料
PDF描述
AH215-S8 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH215-S8 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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AH266-PL-A MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT
相關代理商/技術參數(shù)
參數(shù)描述
AH215-S8-G 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
AH215-S8PCB1960 功能描述:射頻開發(fā)工具 1960MHz Eval Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB2140 功能描述:射頻開發(fā)工具 2140MHz Eval Brd 11dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB900 功能描述:射頻開發(fā)工具 900MHz Eval Brd 18dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8TRG 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
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