參數(shù)資料
型號(hào)： AH215-S8G
英文描述： 1 Watt, High Gain HBT Amplifier
中文描述： 1瓦特，高增益異質(zhì)結(jié)雙極晶體管放大器
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 795K
代理商： AH215-S8G
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 9 June 2005
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Product Features
400 – 2300 MHz
+31.5 dBm P1dB
+46 dBm Output IP3
18 dB Gain @ 900 MHz
Single Positive Supply (+5 V)
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Defense / Homeland Security
Product Description
The AH215 / ECP100 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB
power. The part is housed in a lead-free/green/RoHS-
compliant SOIC-8 package. All devices are 100% RF and
DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 / ECP100 to maintain
high linearity over temperature and operate directly off a
+5 V supply.
Functional Diagram
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc
(3)
Device Voltage, Vcc
Units Min Typ
MHz
400
MHz
dB
10
dB
dB
dBm
+29
dBm
+43.8
dB
Max
2300
2140
11
18
8
+31.5
+45
6.3
(2)
dBm
+25.5
dBm
+23
mA
V
400
450
5
500
1. Test conditions unless otherwise noted: 25oC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51
. (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Typical Performance
(4)
Parameters
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
Typical
1960
12
-11
-10
+32
+46
900
18
-13
-7
+31
+46
2140
11
-18
-8
+31.5
+45
dBm
+25.5
+25.5
dBm
+23
dB
7.0
5.5
6.2
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25
°
C.
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85
°
C
-65 to +150
°
C
+26 dBm
+8 V
900 mA
5 W
+250
°
C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AH215-S8*
Description
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
ECP100G*
AH215-S8G
AH215-S8PCB900
AH215-S8PCB1960
AH215-S8PCB2140
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AH215-S8-G 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
AH215-S8PCB1960 功能描述:射頻開(kāi)發(fā)工具 1960MHz Eval Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類(lèi)型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB2140 功能描述:射頻開(kāi)發(fā)工具 2140MHz Eval Brd 11dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類(lèi)型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB900 功能描述:射頻開(kāi)發(fā)工具 900MHz Eval Brd 18dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類(lèi)型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8TRG 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
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