參數(shù)資料
型號: AH212-S8G
英文描述: 1 Watt High Linearity, High Gain InGaP HBT Amplifier
中文描述: 1瓦特高線性,高增益的InGaP HBT功率放大器
文件頁數(shù): 1/12頁
文件大?。?/td> 591K
代理商: AH212-S8G
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
1800
2400 MHz
26 dB Gain
+30 dBm P1dB
+46 dBm Output IP3
+5V Single Positive Supply
Internal Active Bias
Lead-free/green/RoHS-compliant
SOIC-8 & 4x5mm DFN Package
Applications
Mobile Infrastructure
WiBro Infrastructure
TD-SCDMA
Specifications
(1)
Product Description
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is available in an industry-standard
SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm
DFN package. All devices are 100% RF and DC tested.
The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA,
and WiBro, where high linearity and high power is
required. The internal active bias allows the AH212 to
maintain high linearity over temperature and operate
directly off a +5 V supply.
Functional Diagram
AH212-S8G
AH212-EG
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
W-CDMA Channel Power
@ -45 dBc ACLR
Operating Current Range , Icc
Stage 1 Amp Current, Icc1
Stage 2 Amp Current, Icc2
Device Voltage, Vcc
Units Min Typ Max
MHz
1800
MHz
dB
22.2
dB
dB
dBm
+29
dBm
+43.5
dB
2400
2140
25
25
9
+29.5
+46
6.0
(2)
dBm
+21
mA
mA
mA
V
340
400
85
315
5
500
1. Test conditions unless otherwise noted: 25
oC, +5V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85
C
-65 to +150
C
+26 dBm
+7 V
900 mA
5 W
+250
oC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameters
Frequency
Gain
(3)
Input Return Loss
Output Return Loss
Output P1dB
(3)
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
Typical
1960
25.8
15
11
+30
+48.5
2140
25
25
9
+29.5
+46
dBm
+23.5
dBm
+21
dB
5.5
+5 V @ 400 mA
6.0
3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25
oC
. The AH212-EG in a 4x5
mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB.
Ordering Information
Part No.
Description
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 package)
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 12-pin 4x5mm DFN package)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
AH212-S8G
AH212-EG
AH212-S8PCB1960
AH212-S8PCB2140
AH212-EPCB1960
AH212-EPCB2140
1
2
3
4
8
8
7
7
6
6
5
5
N/C
Vcc2 / RF Out
N/C
Vcc2 / RF Out
Vcc1
Vbias1
RF In
Vbias2
Vbias1
1
2
3
4
5
6
12
11
10
9
8
7
N/C
RF In
N/C
N/C
Vbias2
Vcc1
N/C
Vcc2 / RF Out
Vcc2 / RF Out
N/C
N/C
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