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參數(shù)資料
| 型號(hào)： | AH116 |
| 英文描述： | InGaP HBT Amplifiers |
| 中文描述： | InGaP HBT寬頻放大器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 459K |
| 代理商： | AH116 |
AH116
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
800 – 1000 MHz
+28 dBm P1dB
+42 dBm Output IP3
17 dB Gain @ 900 MHz
Single Positive Supply (+5 V)
MTTF >100 Years
SOIC-8 SMT Package
Applications
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
January 2004
Mobile Infrastructure
Final Stage Amplifier for
Repeaters
Product Description
The AH116 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance for various narrow-
band tuned application circuits with up to +42 dBm OIP3
and +28 dBm of compressed 1-dB power and is housed
in an industry standard SOIC-8 SMT package. All
devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH116 to maintain high linearity over temperature and
operate directly off a +5 V supply. This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function
Vref
Input / Base
Output / Collector
Vbias
GND
N/C or GND
1
2
3
4
8
7
6
5
Pin No.
1
3
6, 7
8
Backside
2, 4, 5
Specifications
Parameters
Frequency Range
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR, 900 MHz
Noise Figure
Operating Current Range (3)
Device Voltage
Units Min
MHz
dB
dB
dB
dBm
dBm
Typ
900
17
-18
-7
+28
+42
Max
1000
800
15
+27
+42
dBm
+23
dB
mA
V
7
200
250
+5
300
Test conditions unless otherwise noted.
1. T = 25oC, Vsupply = +5 V, Frequency = 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Ordering Information
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Rating
-40 to +85
°
C
-65 to +150
°
C
+20 dBm
+8 V
400 mA
2 W
Part No.
AH116-S8
AH116-S8PCB900
Description
1/2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AH116F157501-T | 制造商:TAIYO-YUDEN 制造商全稱:Taiyo Yuden (U.S.A.), Inc 功能描述:CHIP ANTENNA |
| AH116F1575S1-T | 制造商:TAIYO-YUDEN 制造商全稱:Taiyo Yuden (U.S.A.), Inc 功能描述:CHIP ANTENNA |
| AH116F245001-T | 制造商:TAIYO-YUDEN 制造商全稱:Taiyo Yuden (U.S.A.), Inc 功能描述:CHIP ANTENNA |
| AH116F2450S1-T | 制造商:TAIYO-YUDEN 制造商全稱:Taiyo Yuden (U.S.A.), Inc 功能描述:CHIP ANTENNA |
| AH116F555001-T | 制造商:TAIYO-YUDEN 制造商全稱:Taiyo Yuden (U.S.A.), Inc 功能描述:CHIP ANTENNA |
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