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參數(shù)資料
| 型號(hào)： | AGRB10E |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | AGRB10E |
2
Agere Systems Inc.
10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
February 2004
AGRB10E
Preliminary Data Sheet
Electrical Characteristics
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid
exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model
(HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits
and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS
devices should be observed.
Table 4. dc Characteristics (1626 MHz—1661 MHz, 1805 MHz—1880 MHz, 1930 MHz—1990 MHz,
2110 MHz—2170 MHz, 2400 MHz—2483 MHz, 2535 MHz—2665 MHz)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Parameter
Sym
Value
Unit
Thermal Resistance, Junction to Case: AGRB10EU
R
θJC
4.5
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C: AGRB10E
PD
38.9
W
Derate Above 25
°C: AGRB10E
—
0.22
W/°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
AGRB10E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =25A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
0.3
Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0V)
IDSS
——
0.9
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—0.65
—
S
Gate Threshold Voltage (VDS =10V, ID =43A)
VGS(TH)
—
3.3
4.2
Vdc
Gate Quiescent Voltage (VDS =28 V, ID =115 mA)
VGS(Q)
—3.8
—
Vdc
Drain-source On-voltage (VGS =10V, ID =0.5 A)
VDS(ON)
—0.56
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (VDS =28V, VGS =0, f=1.0 MHz)
CRSS
—0.25
—
pF
Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
COSS
—5.15
—
pF
Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
CISS
—18.2
—
pF
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