參數(shù)資料
型號(hào): AGR26045EF
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁(yè)數(shù): 5/9頁(yè)
文件大小: 373K
代理商: AGR26045EF
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Figure 4. CW Broadband Performance
Test conditions:
Two-tone measurement @ 10 MHz tone spacing, VDD = 28 VDC, f1 = 2590 MHz, f2 = 2600 MHz.
Figure 5. IMD3 vs. Output Power and IDQ
20
25
30
35
40
45
50
55
60
2500
2550
2600
2650
2700
FREQUENCY, MHzZ
PO
W
ER
(d
Bm
),
PA
E
(%
)
Z
-20
-15
-10
-5
0
5
10
15
20
GA
IN
(d
B)
,I
RL
(d
B)
Z
GAIN
PAE
P1dB
IRL
-60
-55
-50
-45
-40
-35
-30
-25
-20
0.1
1
10
100
OUTPUT POWER (W) PEPZ
IM
D3
(d
Bc
)Z
300 mA
350 mA
400 mA
450 mA
500 mA
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