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參數(shù)資料
| 型號： | AGR21090EU |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 225K |
| 代理商： | AGR21090EU |
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www.microsemi.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
10
20
30
40
50
ID, Drain Current (A)
td
(o
n
)an
d
td
(o
ff
)(ns)
VDS=533V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
10
20
30
40
50
ID, Drain Current (A)
t r
a
nd
t
f(n
s)
VDS=533V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
300
600
900
1200
1500
10
20
30
40
50
ID, Drain Current (A)
Eon
a
nd
E
o
ff
(
J)
VDS=533V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
500
1000
1500
2000
2500
0
5
10
15
20
25
Gate Resistance (Ohms)
Swi
tchi
n
g
E
n
er
gy
(J)
Switching Energy vs Gate Resistance
VDS=533V
ID=28A
TJ=125°C
L=100H
ZCS
ZVS
Hard
switching
0
50
100
150
200
250
300
350
400
6
8 10 12 14 16 18 20 22 24 26
ID, Drain Current (A)
Fr
eq
u
enc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=533V
D=50%
RG=2.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2
0.6
1
1.4
1.8
VSD, Source to Drain Voltage (V)
I DR
,R
e
v
e
rse
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR21090EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21090EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21090EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21125EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21125EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR21125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21N090EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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