參數(shù)資料
型號: AGR21090EF
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 8/9頁
文件大?。?/td> 399K
代理商: AGR21090EF
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21090E
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 Vdc, f0 = 2140 MHz, IDQ = 800 mA.
CW input.
Figure 10. AM-AM and AM-PM Characteristics
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
15.0
20.0
25.0
30.0
35.0
40.0
45.0
PIN (dBm)Z
PG
S
(d
B)
Z
-20.00
-16.00
-12.00
-8.00
-4.00
0.00
4.00
8.00
PH
AS
E
(d
eg
re
es
)Z
AM TO AM
(power gain [dB])
AM TO PM
(PHASE [degrees])
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相關代理商/技術參數(shù)
參數(shù)描述
AGR21090EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21125E 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21125EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21125EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21180EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray