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參數(shù)資料
| 型號： | AGR21060EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | AGR21060EU |
APTC80A15T1G
APT
C
80A15T1G
–
R
ev
0
A
ugu
st
,2
007
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 800V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 14A
150
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4507
Coss
Output Capacitance
2092
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
180
Qgs
Gate – Source Charge
22
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A
90
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5
35
ns
Eon
Turn-on Switching Energy
486
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
278
J
Eon
Turn-on Switching Energy
850
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
342
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
28
IS
Continuous Source current
(Body diode)
Tc = 80°C
21
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 28A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
550
ns
Qrr
Reverse Recovery Charge
IS = - 28A
VR = 400V
diS/dt = 200A/s
Tj = 25°C
30
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 28A
di/dt
≤ 200A/s
VR ≤ VDSS
Tj ≤ 150°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR21090EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21090EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21090EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21090EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21125EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR21090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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