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參數(shù)資料
| 型號： | AGR19K180EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-4 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 391K |
| 代理商： | AGR19K180EU |
Preliminary Product Brief
September 2003
AGR19K180E
180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR19K180E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor (LDMOS)
RF power transistor suitable for Korean PCS
(IS-95B N-CDMA [narrowband-code division multiple
access] pilot) (1.840 GHz—1.870 GHz) single and
multicarrier class AB power amplifier applications. This
device is manufactured using advanced LDMOS tech-
nology offering state-of-the-art performance and reli-
ability.
Figure 1. Available Packages
Features
I Typical performance ratings for nine carrier Korean
PCS systems with nine Walsh codes per carrier,
27 V, 1.25 MHz carrier bandwidth (BW), adjacent
channel ±750 kHz, alternate channel ±1.98 MHz.
Typical P/A ratio of 11 dB:
— Output power: 21.4 W.
— Power gain: 12 dB min.
— Efficiency: TBD.
— ACPR at 27 V: –46 dBc.
— Spurious emissions: ±1.98 MHz: –40 dBc.
— Return loss: –12 dB.
I High-reliability, gold-metalization process.
I Low hot carrier injection (HCI) induced bias drift
over 20 years.
I Internally matched.
I High gain, efficiency, and linearity.
I Integrated ESD protection.
I Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1.855 GHz, 180 W output
power pulsed 4 s at 10% duty.
I Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
AGR19K180EU
AGR19K180EF
375D–03, STYLE 1
Parameter
Sym
Value
Unit
Thermal Resistance, Junction
to Case:
AGR19K180EU
AGR19K180EF
R
θJC
R
θJC
0.35
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current Continuous
ID
8.5
Adc
Total Dissipation at TC = 25 °C:
AGR19K180EU
AGR19K180EF
PD
230
TBD
W
Derate Above 25
°C:
AGR19K180EU
AGR19K180EF
—
1.31
TBD
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
AGR19K180E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
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